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Krishnan,Ĭreative Commons Attribution-NonCommercial 3.0 Unported Licence. These results are beneficial for cost effective and environment friendly photodetectors and optoelectronic devices based on CuSbS 2 thin films.Ĭopper antimony sulfide thin films for visible to near infrared photodetector applications Photodetector properties such as sensitivity and responsivity are evaluated for all the samples. Better responsivity results were obtained for CAS 40 because of its improved crystallinity and phase purity. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. CuSbS 2 thin films are prepared by combining chemical bath deposition (antimony sulfide (Sb 2S 3)) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. The excellent PEC performance and the identification of the origin of the low photovoltage of the Sb 2S 3 photocathodes in this work pave the way for the further development of this promising earth abundant light absorbing semiconductor for solar fuels generation.Ternary chalcostibite copper antimony sulfide (CuSbS 2) is an emerging semiconductor material having applications in photovoltaics, energy storage and optoelectronics due to its high absorption coefficient, suitable bandgap, and it consists of non-toxic and earth abundant elements. Upon inserting an In 2S 3 buffer layer, which offers a better band alignment, a 0.15 V increase in photovoltage was obtained. Using XPS band alignment studies and potential dependent IPCE measurements, a conduction band offset of 0.7 eV was obtained for the Sb 2S 3/TiO 2 junction as well as an unfavorable band bending at the heterointerface, which explains the low photovoltage that was observed (~ 0.1 V). RHE in 1 M H 2SO 4 under one sun illumination. Using a TiO 2 buffer layer and a platinum co-catalyst, photocurrent densities up to ~ 9 mA cm -2 were achieved at -0.4 V vs. Sb 2S 3 was synthesized by a simple sulfurization of electrodeposited antimony metal at relatively low temperatures (240-300☌) with elemental sulfur. Antimony sulfide (Sb 2S 3) is a promising light absorbing semiconductor for photovoltaic applications, though it remains vastly unexplored for photoelectrochemical water splitting.